Polysilicon Ingots
Price: |
1.0 USD |
Payment Terms: |
T/T,L/C |
Place of Origin: |
Fujian, China (Mainland) |
Product Detail
Means of Transport:
0
Packing:
ctns
Brand Name:
0
Function:
0
Certificate:
0
Cooperative Company:
0
Production Capacity:
1
Delivery Date:
15-30
Specification:
0
Patent Rights:
0
Export Area:
0
Price:US$1.0;Productivity:1;Packing:ctns;Transportation:0;DeliveryDate:15-30;PaymentType:t/t,l/c;Trademark:0;Specification:0;Functions:0;PatentRight:
Features Specifications: Polysilicon Ingots
High quality Silicon Ingots 6" and 8" inch high quality ingots
Growing method: CZ
Purity: 6N at least, solar grade
Crystallinity: Mono-crystalline
Donor type / Dopant: P / Boron
Dislocation density: d3000cm-2
Orientation: 100±3°face and diagonal
Oxygen concentration: d1χ1018 atoms/cm3
Carbon concentration: d5χ1016 atoms/cm3
Resistivity: 0.5 - 3.0 ohm/cm or 3.0 - 6 ohm/cm
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